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Kyoto/ Japan (pte020/10.06.2003/13:04) - IBM http://www.ibm.com and Infineon Technologies AG http://www.infineon.com have achieved a breakthrough in MRAM (Magnetic Random Access Memory) technology by integrating magnetic storage elements into a high performance logical base.
The new technology has the potential to replace existing storage technology by 2005, with MRAM being used to design so-called "instant on" computers, which can be turned on and off as quickly as lights.
IBM and Infineon manufactured their high speed 128Kbit MRAM core using 0.18 micro metre processing technology - creating the smallest MRAM storage cell to date with a size of 1.4 square micro metres.
Magnetic MRAM technology can store more information, faster and with less battery power than electronic storage devices commonly used today. "MRAM has the potential to become the universal storage technology of the future," said T.C. Chen, head of the IBM science and technology research department.
IBM and Infineon have been working together for over ten years on new chip technologies, such as for example Dynamic RAM (DRAM) or integrated DRAM technology. In November 2000 IBM and Infineon launched their MRAM development programme. According to both companies, MRAM products could appear on the market as early as 2005.
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